Integrated circuit including standard cells overlapping each other and method of generating layout of the integrated circuit

ABSTRACT

Provided is an integrated circuit including a plurality of standard cells each including a front-end-of-line (FEOL) region and a back-end-of-line (BEOL) region on the FEOL region, the FEOL region including at least one gate line extending in a first horizontal direction. A BEOL region of a first standard cell among the plurality of standard cells includes an eaves section not overlapping an FEOL region of the first standard cell in a vertical direction, the eaves section protruding in a second horizontal direction perpendicular to the first horizontal direction.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/933,958, filed on Mar. 23, 2018, which claims the benefit of KoreanPatent Application Nos. 10-2017-0075016, filed on Jun. 14, 2017 and10-2017-0121869, filed on Sep. 21, 2017, in the Korean IntellectualProperty Office, the disclosures of each of which are incorporatedherein in their entirety by reference.

BACKGROUND

Inventive concepts relates to an integrated circuit, and moreparticularly, to an integrated circuit including a standard cell and amethod of generating the layout of the integrated circuit.

With the miniaturization of semiconductor processes, the size of astandard cell included in an integrated circuit may be decreased. Thedecreased size of a standard cell may lead to an increase in a mutualinfluence between adjacent standard cells. To prevent or reduce themutual influence from increasing, a structure, e.g., a diffusion breakseparating standard cells from each other, may be inserted between thestandard cells. Meanwhile, a standard cell may have an unnecessary orundesirable space in particular layers according to the structurethereof. Such a wasted space cancels out the decrease in size ofstandard cells and may thus restrict an increase in the degree ofintegration of an integrated circuit.

SUMMARY

Inventive concepts provides an integrated circuit including standardcells overlapping each other and a method of generating the layout ofthe integrated circuit.

According to some example embodiments of inventive concepts, there isprovided an integrated circuit including a plurality of standard cellseach including a front-end-of-line (FEOL) region and a back-end-of-line(BEOL) region on the FEOL region, the FEOL region including at least onegate line extending in a first horizontal direction. A BEOL region of afirst standard cell among the plurality of standard cells may include aneaves section not overlapping an FEOL region of the first standard cellin a vertical direction, the eaves section protruding in a secondhorizontal direction perpendicular to the first horizontal direction.

According to some example embodiments of inventive concepts, there isprovided an integrated circuit including a plurality of first standardcells each including a first FEOL region and a first BEOL region on thefirst FEOL region, the first FEOL region including at least one gateline extending in a first horizontal direction, the first standard cellsbeing consecutively placed in a second horizontal directionperpendicular to the first horizontal direction. The first BEOL regionof each of the first standard cells may overlap, in a verticaldirection, at least part of a first FEOL region of another firststandard cell adjacent in the second horizontal direction.

According to some example embodiments of inventive concepts, there isprovided a computer implemented method of generating a layout of anintegrated circuit. The computer implemented method including accessinga standard cell library defining a plurality of standard cells eachincluding an FEOL region and a BEOL region on the FEOL region, the FEOLregion including at least one gate line extending in a first horizontaldirection; and placing a standard cell based on the standard celllibrary. The placing of the standard cell may include placing a secondstandard cell to be adjacent to a first standard cell in a secondhorizontal direction perpendicular to the first horizontal directionsuch that an eaves section of a BEOL region of the first standard celloverlaps a step section of an FEOL region of the second standard cell ina vertical direction, the eaves section protruding in the secondhorizontal direction, the step section protruding in a directionantiparallel to the second horizontal direction.

According to yet another aspect of inventive concepts, there is provideda computer implemented method of generating a standard cell librarydefining a plurality of standard cells for generating a layout of anintegrated circuit. The computer implemented method includes receivingan input library defining a first standard cell including a first FEOLregion and a first BEOL region on the first FEOL region, the first FEOLregion including at least one gate line extending in a first horizontaldirection and having double diffusion breaks formed at respectiveopposite sides thereof facing each other in a second horizontaldirection perpendicular to the first horizontal direction to extend inthe first horizontal direction; and generating an output librarydefining a second standard cell providing the same function as the firststandard cell, the second standard cell including a second FEOL regionand a second BEOL region on the second FEOL region, the second FEOLregion having single diffusion breaks formed at respective oppositesides thereof facing each other in the second horizontal direction toextend in the first horizontal direction. The output library may definean eaves section of the second BEOL region and a step section of thesecond FEOL region, the eaves section protruding in the secondhorizontal direction, the step section protruding in directionantiparallel to the second horizontal direction

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of inventive concepts will be more clearly understood fromthe following detailed description taken in conjunction with theaccompanying drawings in which:

FIG. 1 is a diagram of standard cells according to an example embodimentof inventive concepts;

FIGS. 2A through 2E are diagrams of some standard cells included in anintegrated circuit, according to an example embodiment of inventiveconcepts;

FIG. 3 is a schematic diagram of part of an integrated circuit,according to an example embodiment of inventive concepts;

FIG. 4 is a flowchart of a method of fabricating an integrated circuitincluding a plurality of standard cells, according to an exampleembodiment of inventive concepts;

FIGS. 5A and 5B are diagrams of examples of standard cells defined by astandard cell library shown in FIG. 4, according to an exampleembodiment of inventive concepts;

FIG. 6 is a diagram of other examples of standard cells defined by thestandard cell library shown in FIG. 4, according to an exampleembodiment of inventive concepts;

FIG. 7 is a diagram of an example of a standard cell defined by astandard cell library, according to an example embodiment of inventiveconcepts;

FIGS. 8A and 8B are diagrams of a method of generating a layout of anintegrated circuit, according to an example embodiment of inventiveconcepts;

FIGS. 9A through 9C are diagrams of a method of generating a layout ofan integrated circuit, according to another embodiment of inventiveconcepts;

FIGS. 10A and 10B are diagrams of a method of generating a layout of anintegrated circuit, according to a further embodiment of inventiveconcepts;

FIGS. 11A and 11B are diagrams of a method of generating a layout of anintegrated circuit, according to yet another embodiment of inventiveconcepts;

FIG. 12 is a flowchart of a method of generating a standard cell libraryincluding a standard cell having an orientation, according to an exampleembodiment of inventive concepts;

FIGS. 13A and 13B are diagrams of a method of generating a standard cellhaving an orientation, according to an example embodiment of inventiveconcepts;

FIG. 14 is a flowchart of a method of generating a standard cell havingan orientation, according to another embodiment of inventive concepts;

FIGS. 15A and 15B are diagrams of a method of generating a standard cellhaving an orientation, according to still another embodiment ofinventive concepts;

FIGS. 16A and 16B are diagrams of a method of generating a standard cellhaving an orientation, according to yet another embodiment of inventiveconcepts;

FIGS. 17A and 17B are diagrams of a method of generating a standard cellhaving an orientation, according to a further embodiment of inventiveconcepts;

FIG. 18 is a diagram of a method of verifying an integrated circuitincluding standard cells having an orientation, according to an exampleembodiment of inventive concepts;

FIG. 19 is a block diagram of a system-on-chip (SoC) according to anexample embodiment of inventive concepts; and

FIG. 20 is a block diagram of a computing system including memorystoring a program according to an example embodiment of inventiveconcepts.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, embodiments of inventive concepts will be described indetail with reference to the accompanying drawings.

FIG. 1 is a diagram of standard cells according to an example embodimentof inventive concepts. In detail, first through third standard cellsC11, C12, and C13 are inverters having an input pin A and an output pinY. A plan view of the first through third standard cells C11 through C13on a plane formed of an X-axis and a Y-axis is shown in the upperportion of FIG. 1. A side view, e.g. a cross-sectional view, of thefirst through third standard cells C11 through C13 in a Y-axis directionis shown in the lower portion of FIG. 1. Hereinafter, a plane formed ofthe X- and Y-axes may be referred to as a horizontal plane; elementsplaced in a +Z direction as compared with other elements may beconstrued as being on or above the other elements; and elements placedin a −Z direction as compared with other elements may be construed asbeing below or under the other elements. An area of a particular objectmay refer to a space occupied by the object on a surface parallel with ahorizontal plane.

A standard cell is a layout unit included in an integrated circuit. Anintegrated circuit may include a plurality of various standard cells.Standard cells may have a structure complying with specific, (oralternatively predetermined) specifications. For example, as shown inFIG. 1, the first through third standard cells C11 through C13 may havea fixed height, e.g. a fixed length in the Y-axis direction, and mayinclude a pair of power rails VDD and GND to which power supply voltagesmay respectively be applied. The power rails VDD and GND extend in theX-axis direction to be parallel with each other and separated from eachother in the Y-axis direction. The first through third standard cellsC11 through C13 may also include at least one gate line which extends inthe Y-axis direction (or a first horizontal direction) and at least oneactive region and at least one fin which extend in the X-axis direction(or a second horizontal direction). An active region may include asemiconductor, such as Si or Ge, or a compound semiconductor, such asSiGe, SiC, GaAs, InAs, or InP, and may include a conductive region suchas an impurity-doped well and/or an impurity-doped structure. A gateline may include a work function metal layer and a gap fill metal film.For example, a work function metal layer may include at least one metalamong Ti, W, Ru, Nb, Mo, Hf, Ni, Co, Pt, Yb, Tb, Dy, Er, and Pd, and agap fill metal film may include a W film and/or an Al film. Gate linesmay have a stack structure of TiAlC/TiN/W, a stack structure ofTiN/TaN/TiAlC/TiN/W, and/or a stack structure ofTiN/TaN/TiN/TiAlC/TiN/W. Although a fin on an active region is notillustrated in the drawings for convenience's sake, the embodiments ofinventive concepts should be construed as applying to a standard cellincluding a fin field effect transistor (FinFET) as well as a standardcell including a planar transistor.

Referring to FIG. 1, the first through third standard cells C11 throughC13 may include a diffusion break as a structure for decreasing a mutualinfluence with another adjacent standard cell when they are placed in anintegrated circuit. A diffusion break may separate active regions ordiffusion regions between adjacent standard cells. For example, as shownin FIG. 1, when the first through third standard cells C11 through C13include a FinFET formed by at least one fin, a diffusion break mayseparate fins from each other between adjacent standard cells.Differently than shown in FIG. 1, when a standard cell includes a planartransistor, a diffusion break may remove at least part of a diffusionregion and/or an active region, thereby separating diffusion regionsbetween adjacent standard cells.

A diffusion break may include a double diffusion break (DDB) and/or asingle diffusion break (SDB) according to a structure. For example, aDDB may be formed below two adjacent gate lines or at least threeadjacent gate lines. The DDB may have a width, i.e., an X-axis directionlength, of about at least 1 contacted poly pitch (CPP) and may extend inthe Y-axis direction. An SDB may be formed below a single gate line orin a region from which a single gate line has been removed and mayextend in the Y-axis direction. Accordingly, the DDB may separateadjacent standard cells by at least 1 CPP, while the SDB may allowadjacent standard cells to be continuously placed.

As shown in FIG. 1, the first through third standard cells C11 throughC13 may include front-end-of-line (FEOL) regions FR11, FR12, and FR13,respectively, formed using an FEOL process and back-end-of-line (BEOL)regions BR11, BR12, and BR13, respectively, formed using a BEOL process.The BEOL regions BR11, BR12, and BR13 may be provided above the FEOLregions FR11, FR12, and FR13, respectively. For example, an FEOL regionin a standard cell may include a substrate, an active region, a fin, anda contact structure. A transistor, a diffusion break, etc. may be formedin, e.g. within, the FEOL region. A BEOL region in a standard cell mayinclude a via and a metal layer. An input pin and an output pin of thestandard cell and interconnection for internal signals may be formed inthe BEOL region. Although a contact structure connected to a gate lineand fins may be formed using a middle-of-line (MOL) process separatelyfrom the FEOL process and the BEOL process, herein a contact structureis understood as being included in an FEOL region. In the drawing, a viaV0 connecting a contact structure with a pattern of a first metal layerM1 is illustrated on the pattern of the first metal layer M1 forconvenience's sake, but the via V0 is may be understood as being betweenthe contact structure and the first metal layer M1.

A DDB may be advantageous in terms of fabricating an integrated circuitby resolving some issues with semiconductor processes but may providelower spatial efficiency than an SDB. While an SDB may provide higherspatial efficiency than a DDB, the SDB may cause some issues withsemiconductor processes and/or may cause the degradation of performanceof a standard cell. For example, as shown in FIG. 1, the first standardcell C11 may include DDB regions DR11 a and DR11 b extending in theY-axis direction with a width of ½ CPP at respective opposite sidesfacing each other in the X-axis direction such that DDBs may be formedtogether with adjacent standard cells. The second standard cell C12 mayinclude SDB regions SR12 a and SR12 b extending at a position of a gateline in the Y-axis direction at respective opposite sides facing eachother in the X-axis direction such that SDBs may be formed together withadjacent standard cells. Accordingly, the first standard cell C11 mayhave a width (i.e., an X-axis direction length) of 3 CPP and the secondstandard cell C12 may have a width of 2 CPP.

As shown in FIG. 1, in the case of the second standard cell C12, theoutput pin Y may be shifted in a −X direction, e.g. in a directionantiparallel to the +X direction, compared to the first standard cellC11, and therefore, the input pin A may also be shifted in the −Xdirection. A contact structure (or a gate contact) CB12 may extend inthe X-axis direction to connect the input pin A with a gate line and maybe referred to as an offset contact structure. The contact structureCB12 may have a specific (or, alternatively, predetermined) length inthe Y-axis direction, and therefore, the number of fins in an activeregion may be decreased compared to the first standard cell C11 so thata distance between fins around the contact CB12 and a contact structure(or an active contact structure) connected to the fins may be ensured.In other words, while the first standard cell C11 may include a total ofsix fins F11 through F16 in an active region, the second standard cellC12 may include a total of four fins F11, F12, F15, and F16 in an activeregion. Due to the decreased number of fins, the second standard cellC12 may have different characteristics than the first standard cell C11.

According to some example embodiments of inventive concepts, a standardcell may include an eaves section protruding in the X-axis direction ina BEOL region and/or a step section protruding in the X-axis directionin an FEOL region. For example, the third standard cell C13 may includean eaves section (marked with “┌”) of the BEOL region BR13 and a stepsection (marked with “┘”) of the FEOL region FR13. The eaves section (┌)and the step section (┘) of the third standard cell C13 may have alength D in the X-axis direction. Accordingly, the third standard cellC13 may include SDB regions SR13 a and SR13 b while having the samepatterns as the first standard cell C11 including the DDB regions DR11 aand DR11 b.

In some example embodiments, an eaves section of a standard cell mayinclude the first metal layer M1 and upper layers thereof. For example,a BEOL region including the via V0 and upper layers thereof has aprotruding eaves section in the embodiments. However, inventive conceptsare not limited thereto. An eaves section may include the first metallayer M1 and upper layers thereof and the via V0 may be in a planarboundary of an FEOL region and may be included in a step section.

As described with reference to FIG. 2A and other drawings below, theeaves section (┌) of the third standard cell C13 may overlap a stepsection of an adjacent standard cell in a Z-axis direction, e.g., avertical direction. Standard cells placed in such a manner may provideincreased spatial efficiency and may substantially have the samecharacteristics as a standard cell (e.g., the first standard cell C11)including a DDB region. In other words, standard cells may have anorientation according to directions in which an eaves section and a stepsection protrude, and standard cells having the same orientation may beconsecutively placed. In addition, the third standard cell C13 may bederived, e.g. easily derived, from the first standard cell C11, as shownin FIG. 1, and therefore, standard cells supporting an SDB may begenerated, e.g. easily generated, from standard cells supporting a DDBwhich have been developed and verified at the initial operational stageof semiconductor processes, as described with reference to FIG. 12 andother drawings below. The increased spatial efficiency may reduce chipsize, which may increase the number of available integrated circuitsproduced on a given substrate. The increased spatial efficiency mayincrease a manufacturing yield of the integrated circuit. The increasedspatial efficiency may reduce a unit cost of manufacturing theintegrated circuit.

FIGS. 2A through 2E are diagrams of some standard cells included in anintegrated circuit, according to an example embodiment of inventiveconcepts. In detail, FIGS. 2A through 2E are cross-sectional views ofstandard cells, taken along the plane formed of the X-axis and theZ-axis, in an integrated circuit. As described above with reference toFIG. 1, “┌” or “¬” marks an eaves section of a BEOL region and “┘” or“└” marks a step section of an FEOL region.

Referring to FIG. 2A, standard cells may be placed such that an eavessection of a standard cell overlaps a step section of an adjacentstandard cell in the Z-axis direction (or the vertical direction). Forexample, as shown in FIG. 2A, an eaves section (┌) of a first standardcell C21 a may overlap a step section (┘) of a second standard cell C22a in the Z-axis direction and an eaves section (┌) of the secondstandard cell C22 a may overlap a step section (┘) of a third standardcell C23 a in the Z-axis direction. As shown in FIG. 2A, for theplacement of a succession of standard cells, each standard cell may havean eaves section (┌) and a step section (┘) respectively protruding inantiparallel, e.g. opposite, directions. Herein antiparallel may meanparallel but oriented in opposite directions. For example, the firstthrough third standard cells C21 a through C23 a may have an eavessection (┌) protruding in a +X direction and a step section (┘)protruding in a −X direction. Herein a standard cell (e.g., C21 a, C22a, or C23 a) having an eaves section protruding in the +X direction anda step section protruding in the −X direction is understood as having a+X orientation and that a standard cell (e.g., C23 b in FIG. 2B) havingan eaves section protruding in the −X direction and a step sectionprotruding in the +X direction is understood as having a −X orientation.

In some embodiments, an SDB may be formed between FEOL regions ofrespective standard cells placed with the +X orientation. For example,as shown in FIG. 2A, an SDB may be formed between an FEOL region of thefirst standard cell C21 a and an FEOL region of the second standard cellC22 a, and the SDB may extend in the Y-axis direction. Meanwhile, asshown in the FEOL regions of the second and third standard cells C22 aand C23 a, active regions and/or fins of adjacent standard cells may beconnected with each other with no diffusion break therebetween. Althoughan SDB is not shown at a boundary of a standard cell or between FEOLregions of adjacent standard cells in the drawings, an SDB may beunderstood as being formed at a border between FEOL regions of adjacentstandard cells.

Referring to FIG. 2B, a standard cell changing an orientation may bebetween standard cells having different orientations in someembodiments. For example, a second standard cell C22 b may be between afirst standard cell C21 b having the +X orientation and the thirdstandard cell C23 b having the −X orientation. The second standard cellC22 b may have a step section (┘) protruding in the −X direction and astep section (└) protruding in the +X direction and the step sections(┘, └) of the second standard cell C22 b may respectively overlap aneaves section (┌) of the first standard cell C21 b and an eaves section(¬) of the third standard cell C23 b in the Z-axis direction.Accordingly, the orientation of standard cells may be changed throughthe second standard cell C22 b. A standard cell like the second standardcell C22 b which changes the orientation of standard cells may beunderstood as having a ±X orientation and is referred to as aconvergence cell. The second standard cell C22 b may provide an outputsignal by processing an input signal like a third standard cell C53shown in FIG. 5B and may also be a filler cell like fourth and fifthstandard cells C54 and C55 shown in FIG. 5B.

Referring to FIG. 2C, a DDB may be formed at a portion where theorientation of standard cells is changed in some embodiments. Forexample, a first standard cell C21 c and a second standard cell C22 cmay be placed such that an eaves section (┌) of the first standard cellC21 c having the +X orientation is adjacent to an eaves section (¬) ofthe second standard cell C22 c having the −X orientation. Accordingly, aDDB DB21 c may be below the eaves sections (¬, ┌) of the first andsecond standard cells C21 c and C22 c, i.e., an empty space between FEOLregions of the first and second standard cells C21 c and C22 c. AlthoughBEOL regions of the first and second standard cells C21 c and C22 c areshown as being in contact, e.g. in direct contact, with each other inFIG. 2C, BEOL regions of respective standard cells having differentorientations, e.g. extending in directions antiparallel to one another,may be separated from each other such that a distance between FEOLregions of the respective standard cells is a width (e.g., 1 CPP) of aDDB.

Referring to FIG. 2D, standard cells may be placed such that standardcells respectively having step sections protruding in differentdirections, respectively, are in contact with each other in someembodiments. For example, as shown in FIG. 2D, a first standard cell C21d and a second standard cell C22 d may be placed such that a stepsection (└) of the first standard cell C21 d having the −X orientationis adjacent to a step section (┘) of the second standard cell C22 dhaving the +X orientation. Accordingly, a space B21 d may be formedbetween BEOL regions of the first and second standard cells C21 d andC22 d, i.e., above FEOL regions (└, ┘) of the first and second standardcells C21 d and C22 d, and the space B21 d in a BEOL region may includepatterns connecting power rails of the first and second standard cellsC21 d and C22 d.

Referring to FIG. 2E, similarly to the embodiments illustrated in FIG.2B, a standard cell changing an orientation may be between standardcells having different orientations in some embodiments. For example, asecond standard cell C22 e may be between a first standard cell C21 ehaving the −X orientation and a third standard cell C23 e having the +Xorientation. The second standard cell C22 e may have an eaves section(¬) protruding in the −X direction and an eaves section (┌) protrudingin the +X direction, and the eaves sections (¬, ┌) of the secondstandard cell C22 e may respectively overlap a step section (└) of thefirst standard cell C21 e and a step section (┘) of the third standardcell C23 e in the Z-axis direction. Accordingly, the orientation ofstandard cells may be changed through the second standard cell C22 e.The second standard cell C22 e may be assumed to have the ±X orientationand may be referred to as a divergence cell. Similarly to the secondstandard cell C22 b shown in FIG. 2B, the second standard cell C22 e mayprovide an output signal by processing an input signal and may also be afiller cell.

FIG. 3 is a schematic diagram of part of an integrated circuit 30 shownin plan view, according to an example embodiment of inventive concepts.As described above with reference to FIG. 1, the integrated circuit 30may include a plurality of standard cells, and the standard cells mayhave a fixed height, e.g., fixed length in the Y-axis direction. Asdescribed with reference to FIG. 3 below, the integrated circuit 30 mayinclude a plurality of standard cells which have the same orientationand are consecutively placed, thereby preventing or reducing thelikelihood of performance degradation of the standard cells andproviding increased spatial efficiency The increased spatial efficiencymay reduce chip size, which may increase the number of availableintegrated circuits produced on a given substrate. The increased spatialefficiency may increase a manufacturing yield of the integrated circuit.The increased spatial efficiency may reduce a unit cost of manufacturingthe integrated circuit.

In some example embodiments, the integrated circuit 30 may includeconsecutively-placed standard cells having the same orientation. Forexample, as shown in FIG. 3, standard cells placed in a first row R31may have the +X orientation (marked with “→”) and may have an eavessection protruding in the +X direction and a step section protruding inthe −X direction, that is, a direction antiparallel to the +X direction.Accordingly, a BEOL region (e.g., an eaves section) of one standard cellmay overlap, in the Z-axis direction, an FEOL region (e.g., a stepsection) of another standard cell adjacent in the +X direction in thefirst row R31. Similarly, standard cells placed in a third row R33 mayhave the −X orientation (marked with “←”) and may have an eaves sectionprotruding in the −X direction and a step section protruding in the +Xdirection. Accordingly, a BEOL region (e.g., an eaves section) of onestandard cell may overlap, in the Z-axis direction, an FEOL region(e.g., a step section) of another standard cell adjacent in the −Xdirection in the third row R33.

In some example embodiments, the integrated circuit 30 may includestandard cells having different orientations in one row. For example, asshown in FIG. 3, the integrated circuit 30 may include a series ofstandard cells having the −X orientation (←) and a series of standardcells having the +X orientation (→) in a second row R32, the −Xorientation and the +X orientation being antiparallel to one another.The integrated circuit 30 may include a standard cell (e.g., C22 e inFIG. 2E), which changes an orientation, at a spot X31 where standardcells having different orientations meet and may include patternsconnecting power rails of adjacent standard cells. Similarly, standardcells having the −X orientation (←) may be between standard cells havingthe +X orientation (→) in a fourth row R34.

FIG. 4 is a flowchart of a method of fabricating an integrated circuitincluding a plurality of standard cells, according to an exampleembodiment of inventive concepts.

A standard cell library D42 may include information about a plurality ofstandard cells, e.g., function information, characteristic information,and layout information. As shown in FIG. 4, the standard cell libraryD42 may define a first group D42_1 including standard cells having the+X orientation, a second group D42_2 including standard cells having the−X orientation, and a third group D42_3 including standard cells havingthe ±X orientation.

Logic synthesis may be performed to generate netlist data D43 fromregister transfer level (RTL) data D41 in operation S410. For example, asemiconductor design tool (e.g., a logic synthesis tool) may performlogic synthesis based on the RTL data D41 written in hardwaredescription languages (HDLs), such as very high speed integrated circuit(VHSIC) HDL (VHDL) and/or Verilog, referring to the standard celllibrary D42, thereby generating the netlist data D43 including abitstream or a netlist. The standard cell library D42 may define aplurality of standard cells that provide the same function and havedifferent orientations and/or may define a plurality of standard cellsthat have the same function and orientation and different boundarystructures. Accordingly, standard cells may provide the same functionwhile having different characteristics and the standard cell library D42may include information about the characteristics of the standard cells.Referring to such information, standard cells may be included in anintegrated circuit during logic synthesis.

Placement and routing (P&R) may be performed to generate layout data D44from the netlist data D43 in operation S420. As shown in FIG. 4, P&R mayinclude a plurality of operations S421, S422, and S423.

Standard cells may be placed in operation S421. For example, asemiconductor design tool (e.g., a P&R tool) may place a plurality ofstandard cells based on the netlist data D41, referring to the standardcell library D42. As described above, the standard cells may have anorientation, and therefore, the semiconductor design tool may place thestandard cells based on the orientation of each standard cell. Forexample, the semiconductor design tool may place standard cells based onthe orientation of each standard cell such that an FEOL region of astandard cell overlaps a BEOL region of an adjacent standard cell in thevertical direction. In addition, after the standard cells are placedaccording to the boundary structures thereof defined in the standardcell library D42, a diffusion break, e.g., a DDB or an SDB, may beplaced between adjacent standard cells.

Interconnections may be created in operation S422. An interconnectionmay electrically connect an output pin with an input pin in a standardcell and may include, for example, at least one contact structure or viaand at least one conductive pattern. The standard cells may be routed bycreating the interconnections. For example, referring to FIG. 2D,interconnections connecting power rails of the first and second standardcells C21 d and C22 d may be formed in the space B21 d in the BEOLregion.

The layout data D44 may be generated in operation S423. The layout dataD44 may be in a format, e.g., Graphics Database System II (GDSII), andmay include geometric information of standard cells andinterconnections.

Optical proximity correction (OPC) may be performed in operation S430.The OPC may refer to an operation of forming a pattern in a specific,e.g. desired, shape by correcting distortion, such as diffraction,caused by the characteristics of light in photolithography included insemiconductor processes for fabricating an integrated circuit. A patternon a mask may be determined by applying the OPC to the layout data D44.In some example embodiments, the layout of an integrated circuit may berestrictively changed in operation S430. For example, at least oneoperation included in any one of methods of generating a layout of anintegrated circuit described with reference to FIGS. 8A through 11Bbelow may be included in operation S420 in some embodiments or may beincluded in operation S430 in other example embodiments. Restrictivelychanging the integrated circuit in operation S430 may be apost-treatment for improving, e.g. optimizing, the structure of theintegrated circuit and may be referred to as design polishing.

A mask may be manufactured in operation S440. For example, patterns on amask may be defined by applying the OPC to the layout data D30, and atleast one mask (or photomask) for forming patterns on each of aplurality of layers may be manufactured. The at least one mask mayinclude the patterns corresponding to the layout data D30.

An integrated circuit may be fabricated in operation S450. For example,the integrated circuit may be fabricated by patterning the layers usingthe at least one mask manufactured in operation S440. As shown in FIG.4, operation S450 may include operations S451 and S452.

An FEOL process may be performed in operation S451. FEOL processing mayrefer to a process of forming individual elements, e.g., a transistor, acapacitor, and a resistor, on a substrate during the fabrication of theintegrated circuit. For example, FEOL processing may include waferplanarization and cleaning, formation of a trench, formation of a well,formation of a gate line, and/or formation of a source and a drain. FEOLprocessing may include photolithography, deposition, dry etching,cleaning, ion implantation, and/or other unit processes; however,inventive concepts are not limited thereto. Photolithography may includepatterning a substrate using at least one mask manufactured in operationS440. Here, a portion formed using the FEOL process may be referred toas an FEOL region and may include, for example, an active region, adiffusion region, a gate line, and a contact structure.

A BEOL process may be performed in operation S452. BEOL processing mayrefer to a process of interconnecting individual elements, e.g., atransistor, a capacitor, and a resistor, during the fabrication of theintegrated circuit. For example, BEOL may include silicidation of gate,source, and drain regions, addition of a dielectric, planarization,formation of a hole, addition of a metal layer, formation of a via, andformation of a passivation layer. BEOL processing may includephotolithography, deposition, etching, planarization, electroplating,etc.; however, inventive concepts are not limited thereto.Photolithography may include patterning a substrate using at least onemask manufactured in operation S440. Here, a portion formed using theBEOL process may be referred to as a BEOL region and may include, forexample, a via and a metal layer pattern. Thereafter, the integratedcircuit may be packaged into a semiconductor package and used as acomponent of various applications.

FIGS. 5A and 5B are diagrams of examples of standard cells defined bythe standard cell library D42 shown in FIG. 4, according to an exampleembodiment of inventive concepts. In detail, FIG. 5A shows standardcells respectively included in the first and second groups D42_1 andD42_2 of the standard cell library D42 and FIG. 5B shows standard cellsincluded in the third group D42_3 of the standard cell library D42. Asdescribed above with reference to FIG. 4, the first group D42_1 mayinclude standard cells having the +X orientation, the second group D42_2may include standard cells having the −X orientation, and the thirdgroup D42_3 may include standard cells having the ±X orientation.Hereinafter, FIGS. 5A and 5B are described with reference to FIG. 4.

Referring to FIG. 5A, the standard cell library D42 may define standardcells that provide the same inverter function and have differentorientations. For example, as shown in FIG. 5A, a first standard cellC51 and a second standard cell C52 may provide the same function as aninverter including the input pin A and the output pin Y, but may havedifferent orientations. In other words, the first standard cell C51 maybe included in the first group D42_1 of the standard cell library D42and may have an eaves section (┌) protruding in the +X direction in aBEOL region BR51 and a step section (┘) protruding in the −X directionin an FEOL region FR51. The second standard cell C52 may be included inthe second group D42_2 of the standard cell library D42 and may have aneaves section (¬) protruding in the −X direction in a BEOL region BR52and a step section (└) protruding in the +X direction in an FEOL regionFR52.

The standard cell library D42 may classify standard cells that providethe same function but have different structures into a same functionalgroup. Standard cells in one same functional group may have differentorientations, may have different boundary structures, as described withreference to FIG. 6 below, and/or may have different pin placements, asdescribed with reference to FIG. 10B below. Standard cells havingdifferent orientations in one same functional group may be symmetrical.For example, as shown in FIG. 5A, the first and second standard cellsC51 and C52 may be symmetrical with respect to an axis parallel with theY-axis.

Referring to FIG. 5B, the standard cell library D42 may define standardcells included in the third group D42_3. For example, a third standardcell C53 may be an inverter having a higher driving strength than thefirst and second standard cells C51 and C52 shown in FIG. 5A. Fourth andfifth standard cells C54 and C55 may be filler cells and may be placedin a space remaining after standard cells having a unique function,e.g., a function of generating an output signal by processing an inputsignal, are placed. As shown in FIG. 5B, standard cells which have the±X orientation and have an FEOL region larger than a BEOL region mayhave relatively fewer input and output pins or relatively fewer metallayer patterns compared to the number of gate lines. The standard cellshaving the ±X orientation and an FEOL region larger than a BEOL regionmay include a function cell having a relatively higher driving strengthand a non-function cell. Although, similarly to the second standard cellC22 b shown in FIG. 2B, standard cells having an FEOL region larger thana BEOL region are illustrated in FIG. 5B, the third group D42_3 may alsobe understood as including standard cells having a BEOL region largerthan an FEOL region, such as the second standard cell C22 e shown inFIG. 2E and a seventh standard cell C97 shown in FIG. 9C.

FIG. 6 is a diagram of other examples of standard cells defined by thestandard cell library D42 shown in FIG. 4, according to an exampleembodiment of inventive concepts. As described above with reference toFIGS. 5A and 5B, the standard cell library D42 may define standard cellsincluded in a same functional group in which the standard cells providethe same function but have different structures.

Referring to FIG. 6, the standard cell library D42 may define standardcells which provide the same function but have different boundarystructures. For example, first through third standard cells C61 throughC63 may provide the same function as standard cells which include inputpins A, B, C, and D and the output pin Y, as illustrated in a plan viewshown in the upper portion of FIG. 6, but may have different boundarystructures, as illustrated in side views shown in the lower portion ofFIG. 6.

The first through third standard cells C61 through C63 may have eavessections (┌), respectively, protruding in the +X direction in BEOLregions BR61, BR62, and BR63, respectively, and may have step sections(┘), respectively, protruding in the −X direction in FEOL regions FR61,FR62, and FR63, respectively, thereby having the same orientation, i.e.,the +X orientation. Meanwhile, the first through third standard cellsC61 through C63 may have different boundary structures in the FEOLregions FR61, FR62, and FR63. In more detail, the first standard cellC61 may have a boundary structure (e.g., no diffusion break) forconnecting the FEOL region FR61 with an FEOL region of another standardcell adjacent in the +X direction, e.g., connecting active regions andfins with each other. The second standard cell C62 may include a DDBregion DR62, in which a DDB separates the FEOL region FR62 from an FEOLregion of another standard cell adjacent in the +X direction, at a sideof the FEOL region FR62. The third standard cell C63 may include an SDBregion SR63, in which an SDB separates the FEOL region FR63 from an FEOLregion of another standard cell adjacent in the +X direction, at a sideof the FEOL region FR63. Accordingly, when the standard cells are placedin operation S421 shown in FIG. 4, appropriate standard cells may beselected from among standard cells in a same functional group defined inthe standard cell library D42, based on the boundary structures ofstandard cells placed to be adjacent to each other. Although only threestandard cells C61 through C63 having different boundary structures areshown in FIG. 6, additional standard cells may also be understood asbeing available according to combinations of different boundarystructures (e.g., no diffusion break, DDB, and SDB) at opposite sides ofan FEOL region.

FIG. 7 is a diagram of an example of a standard cell defined by astandard cell library, according to an example embodiment of inventiveconcepts.

The standard cell library may define an orientation of a standard cellin various ways. In some embodiments, the standard cell library maydefine the shape of a BEOL region and the shape of an FEOL region in astandard cell according to an orientation. For example, the standardcell library may differently define, on a plane, the boundary of a BEOLregion and the boundary of an FEOL region in a standard cell by definingthe shape of an eaves section and the shape of a step section. In someexample embodiments, the standard cell library may define a standardcell having an orientation using a virtual layer. For example, as shownin FIG. 7, the standard cell library may define that the boundary of aBEOL region BR71 of a first standard cell C71 is the same as theboundary of an FEOL region FR71 of the first standard cell C71 on aplane, and may mark portions to be respectively removed from the BEOLregion BR71 and the FEOL region FR71 with marking layers ML71 and ML72,respectively. When standard cells are placed (e.g., in operation S421 inFIG. 4), the marking layers ML71 and ML72 may be recognized by a P&Rtool, so that the P&R tool may recognize the orientation of the firststandard cell C71. Examples of an operation of generating a layout of anintegrated circuit, referring to a standard cell library definingstandard cells, will be described with reference to the drawings below.

FIG. 8A is a flowchart of a method of generating a layout of anintegrated circuit including standard cells which have differentorientations and are placed adjacent to each other, according to anexample embodiment of inventive concepts. FIG. 8B is a diagram of anexample of the layout generated using the method illustrated in FIG. 8A.According to some embodiments of inventive concepts, standard cellshaving different orientations may be placed adjacent to each other, andthe boundary structure of the standard cells may be changed.

Referring to FIG. 8A, standard cells may be placed such that eavessections of the respective standard cells are in contact, e.g. in directcontact, with each other in operation S81. For example, as shown in theleft of FIG. 8B, a first standard cell C81 having the +X orientation anda second standard cell C82 having the −X orientation may be placedadjacent to each other. The first and second standard cells C81 and C82may respectively include SDB regions SR81 and SR82, for forming an SDB,at a side of an FEOL region FR81 and a side of an FEOL region FR82,respectively. A BEOL region BR81 of the first standard cell C81 may bein contact, e.g. in direct contact, with a BEOL region BR82 of thesecond standard cell C82. Accordingly, a space is formed between theFEOL regions FR81 and FR82.

Referring back to FIG. 8A, SDB regions facing each other may be removedand a DDB may be placed in operation S82. For example, as shown in theright of FIG. 8B, the SDB regions SR81 and SR82 may be removed from thesides of the FEOL regions FR81 and FR82 of the first and second standardcells C81 and C82, and a DDB DB80 may be placed between the FEOL regionsFR81 and FR82. Accordingly, the DDB DB80, which may be more advantageousthan an SDB in terms of semiconductor processes, may be generatedwithout influencing the performance of the first and second standardcells C81 and C82. The removing of the SDB regions SR81 and SR82 and theplacement of the DDB DB80 may be performed after the placement (forexample, during P&R) of the first and second standard cells C81 and C82and/or may be performed on the layout (for example, during designpolishing) of the integrated circuit after routing is completed. Forexample, operation S82 shown in FIG. 8A may be included in operationS420 or S430 shown in FIG. 4.

FIG. 9A is a diagram of examples of standard cells including a power tapat one side thereof, the standard cells being defined in a standard celllibrary, according to an example embodiment of inventive concepts. FIG.9B is a flowchart of a method of generating a layout of an integratedcircuit including a structure in which standard cells merge with eachother, the standard cells having different orientations and being placedadjacent to each other, according to an example embodiment of inventiveconcepts. FIG. 9C is a diagram of an example of the layout generatedusing the method illustrated in FIG. 9B. According to some embodimentsof inventive concepts, standard cells having different orientations maybe placed adjacent to each other, and portions of the standard cells maymerge with each other, so that spatial efficiency may be increased. Theincreased spatial efficiency may reduce chip size, which may increasethe number of available integrated circuits produced on a givensubstrate. The increased spatial efficiency may increase a manufacturingyield of the integrated circuit. The increased spatial efficiency mayreduce a unit cost of manufacturing the integrated circuit.

Referring to FIG. 9A, the standard cell library may define standardcells having a power tap at one side thereof. For example, as shown inFIG. 9A, first through fourth standard cells C91 through C94 may havethe +X orientation and may respectively include pairs of power taps PT91a and PT91 b, PT92 a and PT92 b, PT93 a and PT93 b, and PT94 a and PT94b adjacent to a step section. A power tap may refer to a pattern whichprovides a path for supplying a power supply voltage to a standard cell.For example, a power tap may include a contact structure connected to asource of a transistor included in a standard cell and may transmit apositive supply voltage or a negative supply voltage to the transistor.The first through fourth standard cells C91 through C94 may includecontact structures and vias in proximity to a step section, the contactstructures and the vias transmitting a positive supply voltage and anegative supply voltage to transistors. Although standard cells havingthe +X orientation are illustrated in FIG. 9A, the standard cell librarymay define standard cells which have the −X orientation and include apower tap adjacent to a step section, for example, standard cellssymmetrical with the first through fourth standard cells C91 through C94with respect to an axis parallel with the Y-axis. Although each of thepower taps PT91 a, PT91 b, PT92 a, PT92 b, PT93 a, PT93 b, PT94 a, andPT94 b is placed in a standard cell to be adjacent to a step section ofthe standard cell in FIG. 9A, the step section may include at least partof the power tap in other embodiments. As described below, when adjacentstandard cells merge with each other, a power tap may be shared betweenthe standard cells, and an area of the standard cells may be decreased.Accordingly, in some embodiments of inventive concepts, standard cellshaving an orientation may be designed to have a power tap at one sidethereof. This will be described in detail with reference to FIGS. 17Aand 17B below.

Referring to FIG. 9B, standard cells may be placed such that power tapsof the respective standard cells are adjacent to each other in operationS91. For example, as shown in the left of FIG. 9C, a fifth standard cellC95 and a sixth standard cell C96 having different orientations may beplaced adjacent to each other. The fifth standard cell C95 may includepower taps PT95 a and PT95 b adjacent to a step section thereof and thesixth standard cell C96 may include power taps PT96 a and PT96 badjacent to a step section thereof. While an FEOL region FR95 of thefifth standard cell C95 is in contact with an FEOL region FR96 of thesixth standard cell C96, a space may be formed between a BEOL regionBR95 of the fifth standard cell C95 and a BEOL region BR96 of the sixthstandard cell C96.

Referring back to FIG. 9B, the standard cells may be merged with eachother such that the standard cells share a power tap with each other inoperation S92. For example, as shown in the right of FIG. 9C, the fifthand sixth standard cells C95 and C96 are merged to share power taps PT97a and PT97 b, so that a seventh standard cell C97 is generated.Accordingly, an X-axis direction length X92 of the seventh standard cellC97 may be less than an X-axis direction length X91 occupied by thefifth and sixth standard cells C95 and C96 placed adjacent to eachother. As a result, the spatial efficiency of an integrated circuit maybe increased. The increased spatial efficiency may reduce chip size,which may increase the number of available integrated circuits producedon a given substrate. The increased spatial efficiency may increase amanufacturing yield of the integrated circuit. The increased spatialefficiency may reduce a unit cost of manufacturing the integratedcircuit. Standard cell merging shown in FIG. 9C may be performed afterthe placement (for example, during P&R) of the fifth and sixth standardcells C95 and C96 or may be performed on the layout (for example, duringdesign polishing) of the integrated circuit after routing is completed.For example, operation S92 shown in FIG. 9B may be included in operationS420 or S430 shown in FIG. 4.

FIG. 10A is a flowchart of a method of generating a layout of anintegrated circuit, in which standard cells having different pinplacements are selectively placed, according to an example embodiment ofinventive concepts. FIG. 10B is a diagram of examples of standard cellshaving different pin placements. As described below, standard cellssuitable for routing may be selected from among standard cells havingdifferent pin placements and placed in an integrated circuit, accordingto some embodiments of inventive concepts. Operations S101 and S102shown in FIG. 10A may be included in operation S420 shown in FIG. 4.

Referring to FIG. 10A, standard cells having the same function andorientation but different pin placements may be acquired in operationS101. For example, as shown in FIG. 10B, while a first standard cellC101 and a second standard cell C102 may have the +X orientation asinverters including the input pin A and the output pin Y, the first andsecond standard cells C101 and C102 may have different placements of theinput pin A and the output Y. When standard cells having the sameorientation are consecutively placed, routing congestion may occur dueto the positions of input and output pins of the standard cells.Accordingly, a standard cell library may define standard cells whichhave the same function and orientation but different pin placements, andstandard cells having different pin placements may be acquired from thestandard cell library. In some example embodiments, the standard celllibrary may define standard cells of which FEOL regions are symmetricalwith respect to an axis parallel with the Y-axis for different pinplacements. At this time, pin placements of the standard cells may besymmetrical with respect to an axis parallel with the Y-axis.

Referring back to FIG. 10A, one standard cell may be selected from amongthe standard cells and placed, based on routing, in operation S102. Forexample, as shown in FIG. 10B, while the first standard cell C101 may besuitable when an output signal of a standard cell adjacent in the −Xdirection is applied to the input pin A, the second standard cell C102is suitable when a standard cell adjacent in the −X direction receivesan output signal output through the output pin Y. As a result, routingcongestion may be decreased, the amount of time taken to generate thelayout of an integrated circuit may also be decreased, and performanceof the integrated circuit may be increased due to a simple routingarchitecture.

FIG. 11A is a flowchart of a method of generating a layout of anintegrated circuit by modifying standard cells, according to an exampleembodiment of inventive concepts. FIG. 11B is a diagram of an example ofthe layout generated using the method illustrated in FIG. 11A. Asdescribed below, the orientation of a standard cell may be changedduring P&R, according to some embodiments of inventive concepts.

Referring to FIG. 11A, a standard cell having a particular orientationmay be acquired in operation S111. In some example embodiments, astandard cell library may define a standard cell having the samefunction as a previously defined standard cell but a differentorientation than the defined standard cell. For example, as shown inFIG. 11B, the standard cell library may define a first standard cellC111 having the −X direction as an A0122 which includes input pins AO,Al, B0, and B1 and the output pin Y.

Referring back to FIG. 11A, the acquired standard cell is flipped andplaced based on the boundary of a standard cell which the acquiredstandard cell will be placed adjacent to, in operation S112. Forexample, when an adjacent standard cell placed on the right or left ofthe first standard cell C111 has the +X orientation in FIG. 11B, a spacemay be generated, similarly to the embodiments described above withreference to FIGS. 2C and 2D. In this case, when the first standard cellC111 is flipped during P&R (e.g., operation S420 in FIG. 4), a secondstandard cell C112 symmetrical with the first standard cell C111 withrespect to an axis parallel with the Y-axis may be generated, and thesecond standard cell C112 may be placed adjacent to the standard cellhaving the +X orientation. When a standard cell library defining onlystandard cells having one orientation, unlike the standard cell libraryD42 shown in FIG. 4, is used, an operation of flipping and placing astandard cell according to the orientation of the standard cell may beperformed during P&R.

FIG. 12 is a flowchart of a method of generating a standard cell libraryincluding a standard cell having an orientation, according to an exampleembodiment of inventive concepts. As described above with reference toFIG. 1, since a DDB resolves some issues with semiconductor processes,standard cells supporting a DDB may be developed at the initialoperational stage of semiconductor processes. As the issues withsemiconductor processes become resolved thereafter, standard cellssupporting an SDB may be developed. As described below, when standardcells supporting an SDB have an orientation, the standard cellssupporting an SDB may be more easily generated from standard cellssupporting a DDB. In some embodiments, the method illustrated in FIG. 12may be performed by a computing system (e.g., 200 in FIG. 20) includinga processor and memory.

An input standard cell library D121 may be acquired in operation S121.The input standard cell library D121 may include information D121_1about standard cells supporting a DDB. The input standard cell libraryD121 may be non-transiently stored in a computer-readable storage mediumand/or may be received through a communication channel.

A standard cell having an SDB and an orientation may be generated inoperation S122. As described above with reference to FIG. 1, since astandard cell having an orientation may have the same patterns of a BEOLregion as a standard cell supporting a DDB, the standard cell having anorientation may be more easily generated. Operation S122 will bedescribed in detail with reference to FIGS. 13A through 17B below.

An output standard cell library D122 may be generated in operation S123.The output standard cell library D122 may include information D122_1about standard cells supporting an SDB. The output standard cell libraryD122 may be used to generate a layout of an integrated circuit, asdescribed above with reference to FIG. 4, and/or may be used to verifyan integrated circuit, as described with reference to FIG. 18 below.

FIG. 13A is a flowchart of a method of generating a standard cell havingan orientation, according to an example embodiment of inventiveconcepts. FIG. 13B is a diagram of an example of the standard cellgenerated using the method illustrated in FIG. 13A. Operations S131 andS132 shown in FIG. 13A may be included in operation S122 shown in FIG.12.

Referring to FIG. 13A, an FEOL region of a standard cell may be removedby ½ CPP from each of opposite sides thereof in operation S131. Forexample, as shown in FIG. 13B, a first standard cell C131 supporting aDDB may include, at opposite sides thereof, DDB regions DR131 a andDR131 b for the DDB. Since each of the DDB regions DR131 a and DR131 bmay have a width (e.g., an X-axis direction length) of ½ CPP at a sideof the first standard cell C131, the DDB regions DR131 a and DR131 b ofthe first standard cell C131 may be removed when an FEOL region of thefirst standard cell C131 is removed by ½ CPP from each of the oppositesides thereof. Accordingly, while the FEOL region of the first standardcell C131 may have an X-axis direction length of 3 CPP, an FEOL regionof a second standard cell C132 may have an X-axis direction length of 2CPP.

Referring back to FIG. 13A, a BEOL region of the standard cell may beremoved by a total of 1 CPP from opposite sides thereof in operationS132. For example, as shown in FIG. 13B, after the DDB regions DR131 aand DR131 b are removed from the first standard cell C131, the outputpin Y in a BEOL region of the first standard cell C131 may protrude inthe +X direction. When the BEOL region of the first standard cell C131is removed by a total of 1 CPP from opposite sides thereof withoutremoving the output pin Y protruding the +X direction, the secondstandard cell C132 having the +X orientation may be generated.Accordingly, the second standard cell C132 may have an X-axis directionlength of 2 CPP and may include the BEOL region shifted from the FEOLregion in the +X direction. As shown in FIG. 13B, SDB regions SR132 aand SR132 b extending in the Y-axis direction may be respectively addedat the opposite sides of the FEOL region of the second standard cellC132.

FIG. 14 is a flowchart of a method of generating a standard cell havingan orientation, according to an embodiment of inventive concepts. Astandard cell having a different orientation may be generated from astandard cell having a particular orientation.

A standard cell having a particular orientation may be acquired inoperation S141. For example, a standard cell (e.g., C132 in FIG. 13B)having the +X orientation may be generated using the method illustratedin FIG. 13B, and standard cells having the +X orientation may beacquired.

The acquired standard cell may be flipped in operation S142. Forexample, when the second standard cell C132 having the +X orientation,as shown in FIG. 13B, is acquired, a standard cell having the samefunction as the second standard cell C132 but the −X orientation may begenerated by flipping the second standard cell C132 over an axisparallel with the Y-axis.

FIG. 15A is a flowchart of a method of generating a standard cell havingan orientation, according to still an example embodiment of inventiveconcepts. FIG. 15B is a diagram of an example of a standard cellgenerated using the method illustrated in FIG. 15A. Operations S151 andS152 shown in FIG. 15A may be included in operation S122 shown in FIG.12.

Referring to FIG. 15A, a standard cell from opposite sides of which aBEOL region is not removable may be acquired in operation S151. Forexample, as shown in FIG. 15B, an FEOL region FR151 of a first standardcell C151 may be removed by ½ CPP from each of opposite sides thereof byremoving DDB regions, but a BEOL region BR151 of the first standard cellC151 cannot be removed by a total of 1 CPP from opposite sides thereofdue to the input pin A and the output pin Y.

Referring back to FIG. 15A, the boundary of an FEOL region of thestandard cell is shifted in operation S152. For example, as shown inFIG. 15B, the boundary of the FEOL region FR151 of the first standardcell C151 may be shifted by ½ CPP in the −X direction, and therefore, asecond standard cell C152 may have an FEOL region FR152 having the sameX-axis direction length as the FEOL region FR151 of the first standardcell C151 and extending from a gate line in the X-axis direction. As aresult, a BEOL region BR152 of the second standard cell C152 may includean eaves section (┌) protruding in the +X direction and the FEOL regionFR152 of the second standard cell C152 may include a step section (┘)protruding in the −X direction. As well as the FEOL region FR151 of thefirst standard cell C151, the BEOL region BR151 may also be shifted. Asshown in FIG. 15B, the second standard cell C152 may include the BEOLregion BR152 resulting from shifting the BEOL region BR151 of the firststandard cell C151 in the −X direction.

FIG. 16A is a flowchart of a method of generating a standard cell havingan orientation, according to yet another embodiment of inventiveconcepts. FIG. 16B is a diagram of an example of a standard cellgenerated using the method illustrated in FIG. 16A. Operations S161 andS162 shown in FIG. 16A may be included in operation S122 shown in FIG.12.

Referring to FIG. 16A, a standard cell including a pattern removablefrom opposite sides of a BEOL region may be acquired in operation S161.For example, as shown in FIG. 16B, a metal layer pattern M161 of a firststandard cell C161 may include a portion P161 extending from a via V161in the −X direction. The portion P161 of the metal layer pattern M161 isnot electrically connected to other patterns than the via V161electrically connecting the metal layer pattern M161 with a contactstructure and may thus be removable. Similarly, a portion P162 of themetal layer pattern M161 may also be removable.

Referring back to FIG. 16A, at least part of the pattern may be removedand the BEOL region may be reduced in operation S162. For example, as ina second standard cell C162 shown in FIG. 16B, the portion P161 of themetal layer pattern M161 of the first standard cell C161 may be removed,and therefore, the second standard cell C162 may include a BEOL regionhaving a shorter X-axis direction length than that of the first standardcell C161. Accordingly, similarly to the embodiment described above withreference to FIGS. 13A and 13B, an FEOL region of the second standardcell C162 may be generated by removing DDB regions from the firststandard cell C161, and consequently, the second standard cell C162 mayhave the +X orientation.

FIG. 17A is a flowchart of a method of generating a standard cell havingan orientation, according to an example embodiment of inventiveconcepts. FIG. 17B is a diagram of an example of a standard cellgenerated using the method illustrated in FIG. 17A. Operations S171 andS172 shown in FIG. 17A may be included in operation S122 shown in FIG.12.

Referring to FIG. 17A, a power tap for transmitting a power supplyvoltage may be shifted or generated to be adjacent to a step section inoperation S171. As described above with reference to FIG. 15B, thesecond standard cell C152 shown in FIG. 15B may be generated by shiftingthe boundary of the FEOL region FR151 of the first standard cell C151.At this time, a power tap may be placed adjacent to a portion protrudingdue to the shift of the FEOL region FR151, e.g., the step section (┘) ofthe FEOL region FR152, or the power tap may be placed such that at leastpart of the power tap is included in the step section (┘). For example,as shown in FIG. 17B, when power taps PT171 and PT172 are generated tobe adjacent to the step section (┘) of the second standard cell C152shown in FIG. 15B, a first standard cell C171 shown in FIG. 17B may begenerated.

Referring back to FIG. 17A, a pattern may be modified not to change thefunction of a standard cell in operation S172. For example, the inputpin A electrically connected to a gate line GL171 may be influenced bythe power taps PT171 and PT172 in the first standard cell C171 shown inFIG. 17B. For this reason, a gate cut CT171 removing the gate line GL171may be generated, as in a second standard cell C172. Accordingly, asdescribed above with reference to FIGS. 9A through 9C, the secondstandard cell C172 may have a structure allowing the second standardcell C172 to share a power tap with an adjacent standard cell, therebycontributing to an increase in spatial efficiency of an integratedcircuit. The increased spatial efficiency may reduce chip size, whichmay increase the number of available integrated circuits produced on agiven substrate. The increased spatial efficiency may increase amanufacturing yield of the integrated circuit. The increased spatialefficiency may reduce a unit cost of manufacturing the integratedcircuit.

FIG. 18 is a diagram of a method S180 of verifying an integrated circuitincluding standard cells having an orientation, according to an exampleembodiment of inventive concepts. The method S180 shown in FIG. 18 maybe performed by a computing system (e.g., 200 in FIG. 20) including aprocessor and memory.

The method S180 may include a plurality of operations S181 through S183and may generate result data D184 from netlist data D181 and layout dataD182, referring to a standard cell library D183. As described above withreference to FIG. 4, the netlist data D181 may include a netlistdescribing standard cells and connection relationships among thestandard cells in an integrated circuit. The netlist is generatedthrough logic synthesis or the like. The layout data D182 may begenerated by placing and routing standard cells based on the netlistdata D181, referring to the standard cell library D183. The layout dataD182 may represent the layout of an integrated circuit. The standardcell library D183 may include a first group D183_1 including standardcells having the +X orientation, a second group D183_2 includingstandard cells having the −X orientation, and a third group D183_3including standard cells having the ±X orientation. Standard cellsincluded in a same functional group may have different characteristicsaccording to orientations. The first through third groups D183_1 throughD183_3 may individually define information about characteristics ofstandard cells.

Design rule check (DRC) may be performed in operation S181. Design rulesmay be defined based on semiconductor processes, and may define, forexample, a minimum width of a pattern and a minimum distance betweenpatterns. Whether the integrated circuit layout defined by the layoutdata D182 complies with the design rules may be verified, referring tothe first through third groups D183_1 through D183_3 included in thestandard cell library D183. When a portion not complying with the designrules is detected, the result data D184 including coordinates of theportion, a violated design rule, an error, etc. may be generated.Further optimization may be performed and operation S181 may beiterated, e.g. may be iterated to generate a DRC-clean design, i.e. adesign that does not have a portion that does not comply with the designrules.

Layout versus schematic (LVS) may be performed in operation S182. TheLVS may refer to an operation of verifying whether an integrated circuitdefined by the netlist data D181 agrees with an integrated circuitdefined by the layout data D182. For example, whether standard cells andnodes included in the netlist data D181 exist in the layout defined bythe layout data D182 may be verified. The LVS may be performed,referring to the first through third groups D183_1 through D183_3included in the standard cell library D183, and the result data D184including information about a portion not agreeing between the netlistdata D181 and the layout data D182 may be generated. Furtheroptimization may be performed and operation S182 may be iterated, e.g.may be iterated to generate an LV-clean design, i.e. a design that doesnot have a portion that does not agree between the netlist data D181 andthe layout data D182.

Parasitic extraction (PEX) may be performed in operation S183. The PEXmay refer to an operation of extracting parasitic components from thelayout of an integrated circuit defined by the layout data D182 in orderto simulate the performance, e.g., operating speed or power consumption,of the integrated circuit. For example, resistance and capacitance of aninterconnection forming a node may be extracted from the layout dataD182, and an equivalent circuit of the interconnection including theextracted resistance and capacitance may be generated. Parasiticcomponents may be extracted from the layout data D182, referring to thefirst through third groups D183_1 through D183_3 included in thestandard cell library D183, and the result data D184 includinginformation about the extracted parasitic components may be generated.

FIG. 19 is a block diagram of a system-on-chip (SoC) 190 according tosome embodiments of inventive concepts. The SoC 190 may be asemiconductor device and may include an integrated circuit according toan example embodiment of inventive concepts. The SoC 190 is implementedby integrating complex functional blocks, such as intellectualproperties (IPs) performing various functions, into a single chip.According to an example embodiment of inventive concepts, a standardcell may be included in each of the functional blocks of the SoC 190,and therefore, the SoC 190 may have increased spatial efficiency andverified performance The increased spatial efficiency may reduce chipsize, which may increase the number of available integrated circuitsproduced on a given substrate. The increased spatial efficiency mayincrease a manufacturing yield of the integrated circuit. The increasedspatial efficiency may reduce a unit cost of manufacturing theintegrated circuit.

Referring to FIG. 19, the SoC 190 may include a modem 192, a displaycontroller 193, memory 194, an external memory controller 195, a centralprocessing unit (CPU) 196, a transaction unit 197, a power managementintegrated circuit (PMIC) 198, and a graphics processing unit (GPU) 199.The functional blocks of the SoC 190 may communicate with one anotherthrough a system bus 191.

The CPU 196, which may control all operations of the SoC 190, maycontrol operations of other functional blocks including the modem 192,the display controller 193, the memory 194, the external memorycontroller 195, the CPU 196, the transaction unit 197, the PMIC 198, andthe GPU 199. The modem 192 may demodulate a signal received from outsidethe SoC 190 or may modulate a signal generated in the SoC 190 andtransmit the signal to outside of the SoC 190. The external memorycontroller 195 may control operations of transmitting and receiving datato and from an external memory device connected to the SoC 190. Forexample, programs and/or data stored in the external memory device maybe provided to the CPU 196 or the GPU 199 under the control of theexternal memory controller 195. The GPU 199 may execute programinstructions involved in graphics processing. The GPU 199 may receivegraphic data through the external memory controller 195 and may transmitprocessed graphic data to outside of the SoC 190 through the externalmemory controller 195. The transaction unit 197 may monitor a datatransaction of each functional block. The PMIC 198 may control powersupplied to each functional block according to the control of thetransaction unit 197. The display controller 193 may control a display(or a display device) outside the SoC 190 and transmit data generated inthe SoC 190 to the display.

The memory 194 may be or may include non-volatile memory, such aselectrically erasable programmable read-only memory (EEPROM), flashmemory, phase-change random access memory (PRAM or PCRAM), resistanceRAM (RRAM), nano floating gate memory (NFGM), polymer RAM (PoRAM),magnetic RAM (MRAM), or ferroelectric RAM (FRAM or FeRAM), and/or may beor may include volatile memory, such as dynamic RAM (DRAM), static RAM(SRAM), mobile DRAM, double data rate (DDR) synchronous DRAM (SDRAM),low power DDR (LPDDR) SDRAM, graphics DDR (GDDR) SDRAM, or Rambus DRAM(RDRAM).

FIG. 20 is a block diagram of a computing system 200 including memorystoring a program, according to an example embodiment of inventiveconcepts. At least some operations among operations included in a methodof fabricating an integrated circuit (e.g., the method shown in FIG. 4),operations included in a method of generating a layout of an integratedcircuit (e.g., S420 in FIG. 4), and/or operations included in a methodof generating a standard cell library (e.g., the method shown in FIG.12), according to embodiments of inventive concepts, may be performed inthe computing system 200.

The computing system 200 may be a stationary computing system such as adesktop computer, a workstation, or a server or may be a portablecomputing system such as a laptop computer. As shown in FIG. 20, thecomputing system 200 may include a processor 210, input/output (I/O)devices 220, a network interface 230, RAM 240, ROM 250, and a storage260. The processor 210, the I/O devices 220, the network interface 230,the RAM 240, the ROM 250, and the storage 260 may be connected to a bus270 and may communicate with one another through the bus 270.

The processor 210 may be referred to as a processing unit and mayinclude at least one core, which may execute an instruction set (e.g.,Intel Architecture-32 (IA-32), 64-bit extension IA-32, x86-64, PowerPC,Sparc, microprocessor without interlocked pipeline stage (MIPS),advanced recued instruction set computer (RISC) machine (ARM), orIA-64), like a microprocessor, an application processor (AP), a digitalsignal processor (DSP), or a GPU. For example, the processor 210 mayaccess memory, i.e., the RAM 240 or the ROM 250, through the bus 270 andmay execute instructions stored in the RAM 240 or the ROM 250.

The RAM 240 may store a program 241 for fabricating an integratedcircuit, according to an example embodiment of inventive concepts, ormay store at least part of the program 241. The program 241 may enablethe processor 210 to perform at least some operations among operationsincluded in a method of fabricating an integrated circuit, operationsincluded in a method of generating a layout of an integrated circuit,and/or operations included in a method of generating a standard celllibrary (e.g., the method shown in FIG. 12). In other words, the program241 may include a plurality of instructions which can be executed by theprocessor 210. The instructions included in the program 241 may enablethe processor 210 to perform, for example, at least some operationsincluded in the above-described flowcharts.

The storage 260 may not lose data stored therein even when powersupplied to the computing system 200 is cut off. The storage 260 mayinclude a non-volatile memory device or a storage medium such as amagnetic tape, an optical disc, or a magnetic disc. The storage 260 maybe removable from the computing system 200. The storage 260 may storethe program 241 according to an example embodiment of inventiveconcepts. Before being executed by the processor 210, the program 241 orat least part of the program 241 may be loaded from the storage 260 tothe RAM 240. Alternatively or additionally, the storage 260 may store afile written in program language, and the program 241 generated by acompiler from the file or at least part of the program 241 may be loadedto the RAM 240. The storage 260 may also store a database (DB) 261. TheDB 261 may include at least part of information, e.g., the standard celllibrary D42 shown in FIG. 4, the input standard cell library D121 shownin FIG. 12, and the output standard cell library D122 shown in FIG. 12,required or used to design an integrated circuit.

The storage 260 may also store data to be processed by the processor 210or data that has been processed by the processor 210. In other words,the processor 210 may generate data by processing data stored in thestorage 260 or may store generated data in the storage 260 according tothe program 241. For example, the storage 260 may store the RTL dataD41, the net list data D43 and/or the layout data D44 show in FIG. 4 orthe net list data D181, the layout data D182 and/or the result data D184show in FIG. 18.

The I/O devices 220 may include an input device such as a keyboard or apointing device and an output device such as a display device or aprinter. For example, a user may trigger the execution of the program241 by the processor 210, input the RTL data D41 and/or the net listdata D43 shown in FIG. 4, and check the layout data D44 shown in FIG. 4,through the I/O devices 220.

The network interface 230 may provide an access to a network outside thecomputing system 200. For example, the network may include a pluralityof computing systems and communication links. The communication linksmay include wired links, optical links, wireless links, or other typesof links.

The various operations of methods described above may be performed byany suitable means capable of performing the operations, such as varioushardware and/or software component(s), circuits, and/or module(s).

The software may comprise an ordered listing of executableinstructions_for implementing logical functions, and can be embodied inany “processor-readable medium” for use by or in connection with aninstruction execution system, apparatus, or device, such as a single ormultiple-core processor or processor-containing system.

The blocks or steps of a method or algorithm and functions described inconnection with the embodiments disclosed herein may be embodieddirectly in hardware, in a software module executed by a processor, orin a combination of the two. If implemented in software, the functionsmay be stored on or transmitted over as one or more instructions or codeon a tangible, non-transitory computer-readable medium. A softwaremodule may reside in Random Access Memory (RAM), flash memory, Read OnlyMemory (ROM), Electrically Programmable ROM (EPROM), ElectricallyErasable Programmable ROM (EEPROM), registers, hard disk, a removabledisk, a CD ROM, or any other form of storage medium known in the art.

While inventive concepts have been particularly shown and described withreference to embodiments thereof, it will be understood that variouschanges in form and details may be made therein without departing fromthe spirit and scope of the following claims.

What is claimed is:
 1. An integrated circuit comprising: a firststandard cell including a first front-end-of-line (FEOL) region and afirst back-end-of-line (BEOL) region, wherein the first FEOL regionincludes at least one gate line extending in a first horizontaldirection and at least one fin extending in a second horizontaldirection crossing the first horizontal direction, and the first BEOLregion includes a first pattern extending in the first horizontaldirection and overlapping a boundary of the first FEOL region in avertical direction.
 2. The integrated circuit of claim 1, wherein thefirst pattern is an input pin or an output pin of the first standardcell.
 3. The integrated circuit of claim 1, wherein the first BEOLregion includes an eaves section protruding in the second horizontaldirection and not overlapping the first FEOL region in the verticaldirection, and the eaves section includes at least part of the firstpattern.
 4. The integrated circuit of claim 3, further comprising: asecond standard cell adjacent to the first standard cell in the secondhorizontal direction, wherein the second standard cell includes a secondFEOL region and a second BEOL region, and the second FEOL regionincludes a first step section overlapping the eaves section of the firststandard cell in the vertical direction and protruding in directionantiparallel to the second horizontal direction.
 5. The integratedcircuit of claim 4, further comprising: a single diffusion breakextending in the first horizontal direction between the first FEOLregion and the second FEOL region.
 6. The integrated circuit of claim 4,wherein the second BEOL region includes an eaves section protruding inthe second horizontal direction and not overlapping the second FEOLregion of the second standard cell in the vertical direction, and alength of the eaves section of the second standard cell in the secondhorizontal direction is the same as a length of the first step sectionin the second horizontal direction.
 7. The integrated circuit of claim4, wherein the second FEOL region further includes a second step sectionprotruding in the second horizontal direction and not overlapping thesecond BEOL region in the vertical direction, and a length of the secondstep section in the second horizontal direction is the same as a lengthof the first step section in the second horizontal direction.
 8. Theintegrated circuit of claim 7, further comprising: a third standard celladjacent to the second standard cell in the second horizontal direction,wherein the third standard cell includes a third FEOL region and a thirdBEOL region, and the third BEOL region includes an eaves sectionprotruding in a direction antiparallel to the second horizontaldirection and overlapping the second step section in the verticaldirection.
 9. The integrated circuit of claim 3, further comprising: asecond standard cell adjacent to the first standard cell in the secondhorizontal direction, wherein the second standard cell includes a secondFEOL region and a second BEOL region, and the second BEOL regionincludes an eaves section protruding in a direction antiparallel to thesecond horizontal direction and not overlapping the second FEOL regionin the vertical direction.
 10. The integrated circuit of claim 9,further comprising: a double diffusion break extending in the firsthorizontal direction between the first FEOL region and the second FEOLregion, wherein the double diffusion break overlaps the eaves sectionsof the first and second standard cells in the vertical direction. 11.The integrated circuit of claim 3, wherein the first FEOL regionincludes a step section protruding in a direction antiparallel to thesecond horizontal direction and not overlapping the first BEOL region inthe vertical direction, and a length of the step section of the firststandard cell in the second horizontal direction is the same as a lengthof the eaves section of the first standard cell in the second horizontaldirection.
 12. The integrated circuit of claim 11, further comprising: asecond standard cell adjacent to the first standard cell in directionantiparallel to the second horizontal direction, and wherein the secondstandard cell includes a second FEOL region and a second BEOL region,and the second FEOL region includes a step section protruding in thesecond horizontal direction and not overlapping the second BEOL regionin the vertical direction.
 13. The integrated circuit of claim 12,further comprising: a single diffusion break extending in the firsthorizontal direction between the first FEOL region and the second FEOLregion.
 14. The integrated circuit of claim 12, further comprising: atleast one pattern extending in the second horizontal direction betweenthe BEOL region of the first standard cell and the BEOL region of thesecond standard cell and connecting power lines of the first and secondstandard cells.
 15. The integrated circuit of claim 11, furthercomprising: a second standard cell adjacent to the first standard cellin direction antiparallel to the second horizontal direction, whereinthe second standard cell includes a second FEOL region and a second BEOLregion, the second BEOL region comprises a first eaves section and asecond eaves section which do not overlap the second FEOL region in thevertical direction, the first and second eaves sections respectivelyprotrude in the second horizontal direction and the directionantiparallel to the second horizontal direction and have the same lengthin the second horizontal direction, and the first eaves section overlapsthe step section of the first standard cell in the vertical direction.16. The integrated circuit of claim 15, further comprising: a thirdstandard cell adjacent to the second standard cell in directionantiparallel to the second horizontal direction, wherein the thirdstandard cell includes a third FEOL region and a third BEOL region, thethird FEOL region includes a step section protruding in the secondhorizontal direction and overlapping the second eaves section in thevertical direction.
 17. The integrated circuit of claim 11, wherein thefirst FEOL region further comprises at least one transistor and at leastone contact structure configured to transmit a power supply voltage tothe at least one transistor, and the at least one contact structure isadjacent to the step section of the first standard cell.
 18. Theintegrated circuit of claim 3, further comprising: a second standardcell symmetrical with the first standard cell with respect to an axisparallel with the first horizontal direction, the second standard cellproviding the same function as the first standard cell, and wherein aBEOL region of the second standard cell comprises an eaves sectionprotruding in a direction antiparallel to the second horizontaldirection.
 19. The integrated circuit of claim 3, further comprising: asecond standard cell including a second FEOL region and a second BEOLregion which are stacked in the same size and manner as the first FEOLand the second BEOL region, wherein the second standard cell having apin placement that is different from a pin placement of the firststandard cell.
 20. The integrated circuit of claim 19, wherein thesecond FEOL region is symmetrical with the first FEOL region withrespect to an axis parallel with the first horizontal direction.